onsemi FDC5612
$ 0.295
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Cronologia dell'inventario
Tendenza a 3 mesi: -33.80%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6
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Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant: Yes |Diodes Inc. ZXMN6A08E6QTA
Descrizioni
Descrizioni di onsemi FDC5612 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ
Power MOSFET, N Channel, 60 V, 4.3 A, 0.055 ohm, SuperSOT, Surface Mount
Trans MOSFET N Channel 60 Volt 4.3A 6-Pin SuperSOT Tape and Reel
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
MOSFET, N, SUPERSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC561; Termination Type:SMD; Uni / Bi Directional Polarity:N; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:2.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -33.80%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)4.3 A
Current Rating4.3 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation800 mW
Rds On Max55 mΩ
Resistance55 mΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage2.2 V
Turn-Off Delay Time19 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)60 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità