onsemi FDB8860
$ 0.864
Obsolete
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-31
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FDB8860 fornite dai suoi distributori.
N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6mOhm | MOSFET N-CH 30V 80A D2PAK
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,80A I(D),TO-263AB
Power Field-Effect Transistor, 31A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipatio
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.585 nF
Max Operating Temperature175 °C
Max Power Dissipation306 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation254 W
Rds On Max2.3 mΩ
Rise Time213 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time79 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità