onsemi FDB3502
$ 0.989
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.03%
Modelli CAD
0 modelli disponibili
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0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDB3502.
Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-08
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
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N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET
Descrizioni
Descrizioni di onsemi FDB3502 fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ
N-Ch MOSFET 75V 6A/14A 47mΩ@6A,10V 815pF@40V 20V 4.5V@250µA 15nC@10V 3.1W(Ta) 41W(Tc) TO-263AB SMD 10.67mm × 9.65mm × 4.83mm
Power Field-Effect Transistor, 6A I(D), 75V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.03%
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance47 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance815 pF
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.1 W
Rds On Max47 mΩ
Resistance47 MΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time9 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width11.33 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDB3502.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità