onsemi FDB28N30TM
$ 1.011
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Cronologia dell'inventario
Tendenza a 3 mesi: -25.42%
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Schede tecniche e documenti
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonAUIRFS6535
Automotive Q101 300V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Descrizioni
Descrizioni di onsemi FDB28N30TM fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 300V, 28A, 129mΩ, D2PAK
N-Channel 300 V 0.129 Ohm Surface Mount UniFET Mosfet - D2PAK-3
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 300V 28A D2PAK
300 V, 28 A, 129 MILLI OHM N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHANNEL MOSFET, 300V, 28A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:300V; On Resistance Rds(on):108mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
MOSFET, N-CH, 300V, 28A, TO-263AB-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263AB; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -25.42%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance129 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max129 mΩ
Resistance129 mΩ
Rise Time135 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time79 ns
Turn-On Delay Time35 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDB28N30TM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità