onsemi FDB045AN08A0
$ 2.87
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Cronologia dell'inventario
Tendenza a 3 mesi: -2.90%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-04-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIPB050N06NGATMA1
MOSFET N-CH 60V 100A D2PAK N-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
InfineonIPB031NE7N3GATMA1
MOSFET N-CH 75V 100A TO263-3 N-Channel 75 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2
InfineonIPB100N08S207ATMA1
75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
Descrizioni
Descrizioni di onsemi FDB045AN08A0 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ
TO-263AB, SINGLE, N-CH, 75V, 4.5MOHM ULTRAFET TRENCH MOSFET
310W(Tc) 20V 3.7V 138nC@10V 2 N-Ch 80V 6mΩ 120A 6.6nF@25V TO-263 SMD 10.67mm × 9.65mm × 4.83mm
Trans MOSFET N-CH 75V 19A 3-Pin(2+Tab) D2PAK T/R
N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D2PAK
Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
POWER FIELD-EFFECT TRANSISTOR, 1
场效应管, MOSFET, N, SMD, TO-263AB;
IC BUFFER NON-INVERT 5.5V SC88A
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:80A; Resistance, Rds On:0.0045ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.90%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)19 A
Current Rating19 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation310 W
Rds On Max4.5 mΩ
Resistance4.5 MΩ
Rise Time88 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)75 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità