onsemi FDB035N10A
$ 2.077
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FDB035N10A | 55.200 | 800 | Tape & Reel | ||||||||
| Avnet | FDB035N10A | 800 | 800 | 6d | ||||||||
| Newark | FDB035N10A | 303 | 1 | Cut Tape | ||||||||
| Verical | FDB035N10A | 1600 | 800 | |||||||||
| Arrow Electronics | FDB035N10A | 507 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: +34.40%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-03-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonAUIRFS3107-7TRL
MOSFET N-CH 75V 240A D2PAK / N-Channel 75 V 240A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead)
InfineonIRFS3107PBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFS3107TRLPBF
N CH POWER MOSFET, HEXFET, 75V, 230A, D2PAK; Transistor Polarity:N Channel; Cont
Descrizioni
Descrizioni di onsemi FDB035N10A fornite dai suoi distributori.
Power MOSFET, N Channel, 100 V, 214 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +34.40%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.295 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation333 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation333 W
Rds On Max3.5 mΩ
Resistance3.5 MΩ
Rise Time54 ns
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time22 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità