onsemi FDA38N30
$ 2.035
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Cronologia dell'inventario
Tendenza a 3 mesi: -15.66%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FDA38N30 fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 300V, 38A, 85mΩ, TO-3P
N-Channel 300 V 0.085 Ohm 60 nC Flange Mount UniFET Mosfet - TO-3PN
Trans MOSFET N-CH 300V 38A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 300V TO-3
Power MOSFET, N Channel, 300 V, 38 A, 0.07 ohm, TO-204AA, Through Hole
300 V, 38 A, 85 MILLI OHM N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 300V, 38A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3 ;RoHS Compliant: Yes
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -15.66%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation312 W
Rds On Max85 mΩ
Resistance85 MΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time118 ns
Turn-On Delay Time53 ns
Dimensions
Height23.8 mm
Length6.35 mm
Width6.35 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità