onsemi FCPF380N60E

Name: onsemi FCPF380N60E
Brand: onsemi
SKU: FCPF380N60E

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F

$ 1.363

Production

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Distributor		SKU		Min	Pkg
Avnet	2	FCPF380N60E	2000	455					1,447	1,375	22h
Master Electronics		FCPF380N60E	508	40				2,720	1,300	1,300
Onlinecomponents.com		FCPF380N60E	508	40	Bulk			2,720	1,300	1,300
Rochester Electronics	2	FCPF380N60E	2610					1,320	1,180	1,110	20h
DigiKey		FCPF380N60E-ND	1789	1	Tube	3,900	2,555	1,793	1,363	1,307

Cronologia dell'inventario

Tendenza a 3 mesi: -0.70%

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Schede tecniche e documenti

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IHS

Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

Farnell

Cronologia dell'inventario

Trend di 3 mesi:

-0.70%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-02-22

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FCPF380N60E fornite dai suoi distributori.

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F

onsemi

Single N-Channel 600 V 31 W 45 nC Silicon Through Hole Mosfet - TO-220-3

Future Electronics

Power Field-Effect Transistor, 10.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

FAIRCHILD SEMICONDUCTOR FCPF380N60E MOSFET, N-CH, 600V, 10.2A, TO-220F

Fly-Wing Technology

Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220FP Tube

Richardson RFPD

MOSFET, N-CH, 600V, 10.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

element14 APAC

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor

Immagini

TME

Farnell

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: -0.70%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageTO-220-3

MountThrough Hole

Number of Pins3

Weight2.27 g

Technical

Continuous Drain Current (ID)10.2 A

Drain to Source Breakdown Voltage600 V

Drain to Source Voltage (Vdss)600 V

Element ConfigurationSingle

Fall Time10 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.77 nF

Max Operating Temperature150 °C

Max Power Dissipation31 W

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation106 W

Rds On Max380 mΩ

Rise Time9 ns

Schedule B8541290080

Turn-Off Delay Time64 ns

Turn-On Delay Time17 ns

Dimensions

Height9.19 mm

Length10.36 mm

Width4.9 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FCPF380N60E.

IHS

Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

Farnell

Conformità

Classificazione ambientale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine11 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A