onsemi FCPF13N60NT
$ 1.95
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.08%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTF22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP
VishaySIHF15N60E-E3
E-Series N-Channel 600 V 0.28 O 76 nC Flange Mount Power Mosfet -TO-220FP
VishaySIHF15N60E-GE3
34W(Tc) 30V 4V@ 250¦ÌA 78nC@ 10 V 1N 600V 280m¦¸@ 8A,10V 15A 1.35nF@100V TO-220 16.12mm
Descrizioni
Descrizioni di onsemi FCPF13N60NT fornite dai suoi distributori.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220F
600 V, 13 A, 258 MILLI OHM N-CHANNEL SUPREMOS MOSFET Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 13A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.244ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:37A
The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.08%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance258 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9.8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.765 nF
Max Operating Temperature150 °C
Max Power Dissipation33.8 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation33.8 W
Rds On Max258 mΩ
Rise Time10.6 ns
Threshold Voltage2 V
Turn-Off Delay Time45 ns
Turn-On Delay Time14.5 ns
Dimensions
Height15.9 mm
Length10.16 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità