onsemi FCP13N60N

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220
$ 1.656
Obsolete
Pagina del produttoreScheda dati

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Verical
5
FCP13N60N4435
Arrow ElectronicsFCP13N60N4431
Future ElectronicsFCP13N60N50050Tube
Rochester Electronics
2
FCP13N60N3541
2h
Flip ElectronicsFCP13N60N737
6d

Schede tecniche e documenti

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IHS

Datasheet10 pagine12 anni fa
Datasheet0 pagine0 anni fa

Future Electronics

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Parti correlate

onsemiFCP16N60N
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220
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onsemiFCP11N60N
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220
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STMicroelectronicsSTP22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220
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STMicroelectronicsSTP15NM60ND
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
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STMicroelectronicsSTP18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
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InfineonIPP60R199CPXKSA1
139W 20V 2.5V 32nC@ 10V 1N 650V 199m¦¸@ 10V 16A 1.52nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
Dettagli

Descrizioni

Descrizioni di onsemi FCP13N60N fornite dai suoi distributori.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220
onsemi
Single N-Channel 600 V 0.258 Ohm 39.5 nC 33.8 W Silicon Mosfet - TO-220-3
Future Electronics
600 V, 13 A, 258 MILLI OHM N-CHANNEL SUPREMOS MOSFET Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET,N CH,600V,13A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.244ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:116W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
Farnell
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

Immagini

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Rochester Electronics

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  • ON Semiconductor / Fairchild
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  • ON Semiconductor Cor
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
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  • ON Semiconductor Corporation
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  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd