onsemi FCH76N60NF
$ 10.688
Obsolete
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Distributori autorizzati
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-11-08
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
InfineonIPW60R041P6FKSA1
Power MOSFET, N Channel, 600 V, 77.5 A, 0.037 ohm, TO-247, Through Hole
STMicroelectronicsSTW70N60M2
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
STMicroelectronicsSTW88N65M5
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
onsemiFCH041N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 77 A, 41 mΩ, TO-247
STMicroelectronicsSTW78N65M5
STW78N65M5 N-CHANNEL MOSFET TRANSISTOR, 69 A, 710 V, 3-PIN TO-247
Descrizioni
Descrizioni di onsemi FCH76N60NF fornite dai suoi distributori.
N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247
Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)72.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance38 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance11.045 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation543 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation543 W
Rds On Max38 mΩ
Rise Time44 ns
Threshold Voltage3 V
Turn-Off Delay Time213 ns
Turn-On Delay Time51 ns
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCH76N60NF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità