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onsemi FCH76N60N

N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
EOL
Scheda dati
Pagina del produttore

Prezzo e stock

Vedi tutte le interruzioni di prezzo
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Microchip USA
FCH76N60N
206
50
Tray
USD
53,015
53,015
53,015
3d
Component Stockers USA
FCH76N60N
1084
USD
14,910
14,910
14,010
12,670
12,670
>1wk
Win Source
WS-FCH76N60N
9900
6
USD
11,289
7,526
7,526
7,526
21h
Worldway Electronics
FCH76N60N
27.539
7
Tape & Reel
USD
5,537
5,433
5,224
5,119
19h
IC Components Ltd.
FCH76N60N
28.600
USD
21,930
20,154
17,021
15,141
15,141
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FCH76N60N.

IHS

Datasheet9 pagine5 anni fa
Datasheet8 pagine12 anni fa

onsemi

element14 APAC

Farnell

Fairchild Semiconductor

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-05-13
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Dettagli
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MOSFET N-CH 600V 77.5A TO247-3 N-Channel 600 V 77.5A (Tc) 481W (Tc) Through Hole PG-TO247-3
Dettagli
InfineonIPW60R041C6FKSA1
MOSFET N-CH 600V 77.5A TO247-3 N-Channel 600 V 77.5A (Tc) 481W (Tc) Through Hole PG-TO247-3-1
Dettagli
onsemiFCH041N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 77 A, 41 mΩ, TO-247
Dettagli
STMicroelectronicsSTW78N65M5
STW78N65M5 N-CHANNEL MOSFET TRANSISTOR, 69 A, 710 V, 3-PIN TO-247
Dettagli
STMicroelectronicsSTW70N60M2
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
Dettagli

Descrizioni

Descrizioni di onsemi FCH76N60N fornite dai suoi distributori.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
onsemi
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
Future Electronics
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Semicontronic
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
Farnell
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

Immagini

Farnell
RS
Farnell
TME
Rochester Electronics
iiiC
UTSource
Future Electronics

Alias del produttore

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  • ON Semiconductor / Fairchild
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd