onsemi FCH165N60E

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247

SuperFET2 600V 165mohm slow version - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

FAIRCHILD SEMICONDUCTOR FCH165N60E MOSFET Transistor, N Channel, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 VNew

Power Field-Effect Transistor, 23A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

227W(Tc) 20V 3.5V@ 250µA 75nC@ 10 V 1individualNChannel 600V 165mΩ@ 11.5A,10V 23A 2.434nF@380V TO-247-3 Through hole mounting 15.87mm*4.82mm*20.82mm

MOSFET, N-CH, 600V, 23A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.