onsemi FCH041N60F
$ 6.56
Production
Prezzo e stock
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FCH041N60F | 1253 | 1 | |||||||||
| Onlinecomponents.com | FCH041N60F | 0 | 30 | Bulk | ||||||||
| Future Electronics | FCH041N60F | 0 | 450 | Tube | ||||||||
| Master Electronics | FCH041N60F | 0 | 30 | |||||||||
| Avnet | FCH041N60F | 0 | 450 | 14h |
Cronologia dell'inventario
Tendenza a 3 mesi: +5.78%
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTWA88N65M5
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
onsemiFCH041N65F-F155
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247
onsemiFCH041N65EF-F155
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 71 mΩ, TO-247
VishaySIHG70N60EF-GE3
Mosfet N-Ch 600V 70A To-247 Ef Series Rohs Compliant: Yes |Vishay SIHG70N60EF-GE3
Descrizioni
Descrizioni di onsemi FCH041N60F fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247
Power Field-Effect Transistor, 76A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET, N-CH, 600V, 76A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +5.78%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.365 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation595 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation595 W
Rds On Max41 mΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time244 ns
Turn-On Delay Time63 ns
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità