onsemi FCB11N60TM
$ 1.757
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.34%
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
Parti correlate
STMicroelectronicsSTB14NK50ZT4
STMicroelectronics N-Ch MOSFET MDmesh SuperMESH Vds=500V 14A D2PAK (TO-263) SMD 3-Pin
STMicroelectronicsSTB12NM50T4
N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET
STMicroelectronicsSTB16N65M5
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package
VishayIRFS11N50APBF
Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-263 (D2PAK), Surface Mount
Descrizioni
Descrizioni di onsemi FCB11N60TM fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK
MOSFET N-CH 600V 11A D2PAK / Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
onsemi N-Ch MOSFET SuperFET Vds=600V 11A D2PAK (TO-263) SMD 3-Pin
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET, N CH, 600V, 11A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:33A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.34%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.49 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Resistance380 MΩ
Rise Time98 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time119 ns
Turn-On Delay Time34 ns
Voltage Rating (DC)600 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCB11N60TM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità