onsemi FCA20N60F

N-Channel Power MOSFET, SuperFET®, FRFET®, 600V, 20A, 190mΩ, TO-3P

SUPERFET 600 V N-CHANNEL FRFET Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, N, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):150mohm; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:TO-3PN; Power Dissipation Pd:208W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.