onsemi DTA143ZET1G
$ 0.045
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.50%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi DTA143ZET1G fornite dai suoi distributori.
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R / TRANS PREBIAS PNP 200MW SC75
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
DTA143ZE Series 50 V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor - SC-75
PNP Bipolar Digital Transistor (BRT)
DTA143ZET1G PNP DIGITAL TRANSISTOR,100 MA 50V 4.7 KOHMS, RATIO OF 0.1,3-PIN SC-75
ON SEMICONDUCTOR - DTA143ZET1G - BRT TRANSISTOR, 50V, 47K/4.7KOHM, SC75, FULL REEL
TRANS, AEC-Q101, PNP, -50V, -0.1A, SC-75; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SC-75; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -5.50%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità