onsemi BUL45D2G
$ 1.505
EOL
Cronologia dell'inventario
Tendenza a 3 mesi: -58.82%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
onsemiKSC5338DTU
Transistor, bjt, npn,450V V(Br)Ceo,5A I(C),to-220Ab Rohs Compliant: Yes |Onsemi KSC5338DTU
NXP SemiconductorsPHE13005,127
PHE Series NPN 75 W 400 V 4 A Flange Mount Power Transistor - TO-220-3
Descrizioni
Descrizioni di onsemi BUL45D2G fornite dai suoi distributori.
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BUL Series 400 V 5 A High Speed High Gain NPN Power Transistor TO-220AB
Trans GP BJT NPN 400V 5A 75000mW 3-Pin(3+Tab) TO-220AB Tube
400V 75W 5A 10@2A1V 13MHz 320mV@2A400mA NPN -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
5 A 400 V NPN Si POWER TRANSISTOR TO-220AB
TRANSISTOR, NPN, 400V, 5A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 13MHz; Power Dissipation Pd: 75W; DC Collector Current: 5A; DC Current Gain hFE: 10hFE; Transistor
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore there is no need to guarantee an hFE window.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -58.82%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage460 mV
Collector Emitter Voltage (VCEO)400 V
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)12 V
Frequency13 MHz
Gain Bandwidth Product13 MHz
hFE Min10
Max Collector Current5 A
Max Frequency12 MHz
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation75 W
Schedule B8541290080
Transition Frequency13 MHz
Voltage Rating (DC)700 V
Dimensions
Height9.28 mm
Length10.28 mm
Width4.82 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BUL45D2G.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità