onsemi BD676G

Medium Power PNP Darlington Bipolar Power Transistor
$ 0.659
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester ElectronicsBD676G3746
1h
RS (Formerly Allied Electronics)BD676G01Bulk
2h
element14 APACBD676G.01
14h
FarnellBD676G.01
1h
Win SourceWS-BD676G40090
2h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi BD676G.

IHS

Datasheet5 pagine12 anni fa

Upverter

Farnell

onsemi

Newark

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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4.0 A, 45 V PNP Darlington Bipolar Power Transistor
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Descrizioni

Descrizioni di onsemi BD676G fornite dai suoi distributori.

Medium Power PNP Darlington Bipolar Power Transistor
onsemi
BD Series 45 V 4 A Medium Power Silicon PNP Darlington Transistor - TO-225
Future Electronics
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
IHS
ON SEMI BD676G PNP DARLINGTON TRANSISTOR, 4 A 45 V HFE:750, 3-PIN TO-225
RS (Formerly Allied Electronics)
DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor
Farnell
This series of plastic medium-power silicon PNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications.
North Star Micro
Darlington Transistor, Pnp, -45V, To-225; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:45V; Frecuencia De Transición Ft:200Mhz; Disipación De Potencia Pd:40W; Corriente De Colector Dc:4A; Núm. De Contactos:3 |Onsemi BD676G
Newark
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 4 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 750 / Collector-Base Voltage (Vcbo) V = 45 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 40 / Package Type = TO-225 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bulk Box / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.5 / Reflow Temperature Max. °C = 260
Distrelec

Immagini

TME
Distrelec
RS
Future Electronics
iiiC
Conrad
Farnell

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BD 676G
  • BD676G.