onsemi BCX70J...

BCX70 Series 45 V 0.2 A 350 mW SMT NPN Epitaxial Silicon Transistor - SOT-23-3
Obsolete
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DistributorSKUMinPkg
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2
BCX70J...05Cut Tape
16h
Farnell
2
BCX70J...05Cut Tape
1d
Component Stockers USABCX70J575
17h
Win SourceWS-BCX70J231.000305
3h
Worldway ElectronicsBCX70J90947Tape & Reel
2h

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Datasheet3 pagine23 anni fa
Datasheet0 pagine0 anni fa
Datasheet2 pagine25 anni fa
Datasheet2 pagine25 anni fa

onsemi

Farnell

element14 APAC

Fairchild Semiconductor

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2019-01-26
LTD Date2019-07-26
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi BCX70J... fornite dai suoi distributori.

BCX70 Series 45 V 0.2 A 350 mW SMT NPN Epitaxial Silicon Transistor - SOT-23-3
Future Electronics
TRANS NPN 45V 0.2A SOT-23 / Trans GP BJT NPN 45V 0.2A 350mW 3-Pin SOT-23 T/R
Win Source
NPN GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
ComSIT Distribution GmbH
BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:550mV; Current Ic Continuous a Max:200mA; Gain Bandwidth ft Typ:125MHz; Hfe Min:40; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD
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Newark
Farnell
Newark
Conrad

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