onsemi BC848CPDW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon
$ 0.052
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Datasheet19 pagine4 anni fa

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Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)

Parti correlate

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon
Bipolar Transistors (BJT); BC847BDW1T1G; ON SEMICONDUCTOR; NPN; 6; 45 V; 100 mA
ON SEMI BC847BDW1T3G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363

Descrizioni

Descrizioni di onsemi BC848CPDW1T1G fornite dai suoi distributori.

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC Series 30 V 100 mA SMT NPN/PNP Silicon Dual General Purpose TransistorSOT-363
ON SEMI BC848CPDW1T1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 6-PIN SOT-363
Trans GP BJT NPN/PNP 30V 0.1A 380mW 6-Pin SC-88 T/R
onsemi NPN/PNPTransistor, SOT-363encapsulation, SMD mount, Maximum DC collector current200 mA, maximum collector-emission voltage30 V
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
TRANSISTOR ARRAY, DUAL N&P, 30V, SOT-363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 30V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 420hFE; Transistor Case Style: SO

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