onsemi BC847CDW1T1G
$ 0.044
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Cronologia dell'inventario
Tendenza a 3 mesi: +122%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiBC847BPDW1T1G
Bipolar - RF Transistor, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, SOT-363
onsemiBC847BDW1T1G
Bipolar Transistors (BJT); BC847BDW1T1G; ON SEMICONDUCTOR; NPN; 6; 45 V; 100 mA
onsemiBC847BDW1T3G
ON SEMI BC847BDW1T3G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
Descrizioni
Descrizioni di onsemi BC847CDW1T1G fornite dai suoi distributori.
Bipolar Transistors (BJT); BC847CDW1T1G; ON SEMICONDUCTOR; NPN; 6; 45 V; 100 mA
ON SEMI BC847CDW1T1G NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
BC Series 45 V 100 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN 45V 0.1A 380mW 6-Pin SC-88 T/R
BIPOLAR TRANSISTOR, NPN, DUAL, 45V, SOT363
Bipolar Transistors - BJT 100mA45V Dual NPN
onsemi NPNTransistor, SOT-363 (SC-88)encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage45 V
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Bipolar Transistor, Npn, Dual, 45V, Sot363; Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:45V; Dc Collector Current:100Ma; Power Dissipation Pd:380Mw; Transistor Mounting:surface Mount; No. Of Pins:6Pins Rohs Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +122%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BC847CDW1T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità