onsemi 4N38M
$ 0.178
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Cronologia dell'inventario
Tendenza a 3 mesi: -20.55%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2007-09-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi 4N38M fornite dai suoi distributori.
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP Black Bulk
6-pin DIP High Voltage Phototransistor Output Optocoupler
80V 4170V 100mA 1V@4mA,20mA 1 6V 1.15V DC DIP-6 Optocouplers - Phototransistor Output ROHS
Single Channel 80 V 4170 V Through Hole Phototransistor Optocoupler-DIP-6
Transistor Output Optocoupler, 1-Element, 7500V Isolation
The H11DX and 4N38 are photo transistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon photo transistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -20.55%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDIP
Contact PlatingTin
MountThrough Hole
Number of Pins6
Weight855 mg
Technical
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)1 V
Current Transfer Ratio2 %
Dark Current50 nA
Fall Time5 µs
Forward Current80 mA
Forward Voltage1.5 V
Isolation Voltage7500 Vrms
Max Collector Current100 mA
Max Input Current80 mA
Max Operating Temperature100 °C
Max Output Voltage80 V
Max Power Dissipation260 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output Current per Channel100 mA
PackagingBulk
Power Dissipation300 mW
Reverse Breakdown Voltage6 V
Rise Time5 µs
Schedule B8541408000
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità