onsemi 2N7002WT1G
$ 0.048
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 2N7002WT1G | 6.423.000 | 3K | 2d | ||||||||
| Newark | 2N7002WT1G | 35.438 | 1 | Cut Tape | ||||||||
| Verical | 2N7002WT1G | 63.000 | 3K | |||||||||
| Arrow Electronics | 2N7002WT1G | 44.097 | 1 | |||||||||
| Future Electronics | 2N7002WT1G | 345.000 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: +213%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonBSS138WH6433XTMA1
BSS138W Series 60 V 3.5 Ohm 0.28 A SIPMOS® Small-Signal-Transistor - PG-SOT-323
Descrizioni
Descrizioni di onsemi 2N7002WT1G fornite dai suoi distributori.
2N7002WT1G N-channel MOSFET Transistor; 0.34 A; 60 V; 3-Pin SC-70
N-Channel 60 V 1.6 Ohm 280 mW Surface Mount Small Signal MOSFET - SOT-323
N CHANNEL MOSFET, 60V, 340mA, SC-70, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 340mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 340 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 29 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 55.8 / Turn-ON Delay Time ns = 12.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 280
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +213%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-323
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)310 mA
Drain to Source Breakdown Voltage78 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance24.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation200 mW
Rds On Max1.6 Ω
Resistance1.6 Ω
Rise Time9 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time12.5 ns
Turn-On Delay Time5.85 ns
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità