onsemi 1N6373G
$ 0.65
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.50
Introduction Date1999-01-01
Parti correlate
Diodes Inc.SMCJ5.0A-13-F
Tvs Diode, 1.5Kw, 5V, Unidir, Smc Rohs Compliant: Yes |Diodes Inc. SMCJ5.0A-13-F
Descrizioni
Descrizioni di onsemi 1N6373G fornite dai suoi distributori.
Diode Transient Voltage Suppressor Single Uni Directional 5 Volt 1.5KW 2-Pin Case 41A-04 Bulk
1500 Watt MOSORB® Transient Voltage Suppressor, 6.0 V Unidir
Transient Voltage Suppressor (TVS) Diode; Termination Type:Axial Leaded; Package/Case:457; Breakdown Voltage Max:6.7V; Breakdown Voltage, Vbr:6.3V; Leaded Process Compatible:Yes; Leakage Current Max:300µA ;RoHS Compliant: Yes
DIODE, TVS, UNI, 6.3V, 41A-04; Reverse Stand-Off Voltage Vrwm:5V; Breakdown Voltage Range:6V; Clamping Voltage Vc Max:9.4V; Diode Configuration:Unidirectional; Peak Pulse Current Ippm:160A; Diode Case Style:41A; No. of Pins:2; Power Dissipation Pd:5W; SVHC:No SVHC (19-Dec-2011); Breakdown Voltage:6V; Breakdown Voltage Max:6.7V; Breakdown Voltage Vbr:6.3V; Breakover Voltage Min:6V; Current Ir Max:300µA; Diode Type:TVS, Unidirectional; Operating Temperature Range:-65°C to +175°C; Package / Case:Case 40; Peak Pulse Power:1.5kW; Power Dissipation Pd:5W; Reverse Voltage Vr Max:5V; Stand-off Voltage:5V; Termination Type:Axial Leaded
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageAxial
Contact PlatingTin
Number of Pins2
Number of Terminals2
Weight4.535924 g
Technical
Breakdown Voltage6 V
Clamping Voltage9.4 V
CompositionZener
Current41 A
DirectionUnidirectional
Element ConfigurationSingle
ESD ProtectionYes
Leakage Current300 µA
Max Breakdown Voltage6 V
Max Operating Temperature175 °C
Max Power Dissipation5 W
Max Reverse Leakage Current300 µA
Max Surge Current10 A
Min Breakdown Voltage6 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
Number of Unidirectional Channels1
Operating Supply Voltage5 V
Peak Pulse Current10 A
Peak Pulse Power 1.5 kW
PolarityUnidirectional
Power Line ProtectionNo
Reverse Breakdown Voltage6 V
Reverse Standoff Voltage5 V
TerminationAxial
Test Current1 mA
Voltage63 V
Working Voltage3.5 V
Dimensions
Diameter5.3 mm
Height5.3 mm
Length9.5 mm
Width5.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi 1N6373G.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità