NXP Semiconductors PMBFJ112,215
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | PMBFJ112,215 | 0 | 5 | Cut Tape | 16h | |||||||
| Worldway Electronics | PMBFJ112,215 | 5688 | 7 | Tape & Reel | 20h | |||||||
| Aztech | PMBFJ112,215 | 10.412 | 13h | |||||||||
| Fmall Co., Limited | PMBFJ112,215 | 36.530 | 1d | |||||||||
| Tactical IC USA | PMBFJ112,215 | Contatto | 11h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors PMBFJ112,215.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1993-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-06-30
LTD Date2016-12-31
Parti correlate
NXP SemiconductorsPMBFJ175,215
Jfet Transistor, Junction Field Effect, Jfet, 30 V, 7 Ma, 70 Ma, 6 V, Sot-23 Rohs Compliant: Yes
NXP SemiconductorsPMBFJ174,215
NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
Descrizioni
Descrizioni di NXP Semiconductors PMBFJ112,215 fornite dai suoi distributori.
Jfet Transistor, Junction Field Effect, Jfet, 40 V, 5 Ma, 3 V, Sot-23 Rohs Compliant: Yes
PMBFJ112 Series 5 Vgs 50 mA SMT N-Channel junction FETs - SOT-23-3
Transistor JFET N-CH 40V 3-Pin TO-236AB T/R
40 V N-CHANNEL Si SMALL SIGNAL JFET TO-236AB
Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
PMBFJ112,215,TAPE7 FET-RFSS, SOT23, R77 <AZ
TRANSISTOR, JFET, N, RF, SOT-23; Breakdown Voltage Vbr: 40V; Zero Gate Voltage Drain Current Idss Min: 5mA; Zero Gate Voltage Drain Current Idss Max: -; Gate-Source Cutoff Voltage Vgs(off) Max: -3V; Transistor Case Style: SOT
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight200.998119 mg
Technical
Breakdown Voltage-40 V
Continuous Drain Current (ID)5 mA
Drain to Source Resistance50 Ω
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)-40 V
Input Capacitance6 pF
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Dimensions
Height1 mm
Length3 mm
Width1.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors PMBFJ112,215.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità