NXP Semiconductors PHT4NQ10LT,135
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors PHT4NQ10LT,135.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2000-09-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di NXP Semiconductors PHT4NQ10LT,135 fornite dai suoi distributori.
Mosfet Transistor, N Channel, 1.75 A, 100 V, 0.2 Ohm, 5 V, 2 V Rohs Compliant: Yes
Power MOSFET, N Channel, 100 V, 1.75 A, 0.2 ohm, SOT-223, Surface Mount
Trans MOSFET N-CH 100V 3.5A 4-Pin(3+Tab) SOT-223 T/R
MOSFET, N CH, 100V, 3.5A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:6.9W; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:3.5A; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Packaging:Cut Tape; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:130V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageSOT
Contact PlatingTin
Number of Pins4
Number of Terminals4
Weight4.535924 g
Technical
Continuous Drain Current (ID)3.5 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance374 pF
Max Dual Supply Voltage100 V
Max Operating Temperature150 °C
Max Power Dissipation6.9 W
Min Breakdown Voltage100 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation6.9 W
Rds On Max250 mΩ
Resistance40 MΩ
Rise Time10 ns
Threshold Voltage2 V
Turn-Off Delay Time52 ns
Turn-On Delay Time4 ns
Dimensions
Height1.7 mm
Length6.7 mm
Width3.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors PHT4NQ10LT,135.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità