NXP Semiconductors PBSS8110Y
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di NXP Semiconductors PBSS8110Y fornite dai suoi distributori.
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR, NPN, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:290mW; DC Collector Current:1A; DC Current Gain hFE:150hFE; Transistor Case Styl
TRANSISTOR, NPN, SOT-363; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:40mV; Power Dissipation:290mW; Min Hfe:80; ft, Typ:100MHz; ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 290mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 40mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 430mW; Power Dissipation per device Max: 290mW; SMD Marking: 81; Voltage Vcbo: 120V
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)100 V
Emitter Base Voltage (VEBO)5 V
hFE Min80
Max Collector Current1 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation290 mW
Transition Frequency100 MHz
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità