NXP Semiconductors MRF6V2010GNR1
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | MRF6V2010GNR1 | 0 | 1 | Cut Tape | 18h | |||||||
| Component Stockers USA | MRF6V2010GNR1 | 11.978 | >1wk | |||||||||
| Worldway Electronics | MRF6V2010GNR1 | 13.410 | 7 | Tape & Reel | 18h | |||||||
| SHENGYU ELECTRONICS | MRF6V2010GNR1 | 13.598 | 1 | 2d | ||||||||
| Fmall Co., Limited | MRF6V2010GNR1 | 19.680 | 7d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRF6V2010GNR1.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2016-09-12
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2021-12-01
LTD Date2022-05-31
Parti correlate
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RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
NXP SemiconductorsMMRF1304NR1
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V/ REEL RoHS Compliant: Yes
NXP SemiconductorsMW6S010GNR1
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
Descrizioni
Descrizioni di NXP Semiconductors MRF6V2010GNR1 fornite dai suoi distributori.
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1731
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2
NXP Semiconductors SCT
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-270G T/R
MRF6V2010 Series 50 V 30 mA 220 MHz 23.9 dB 10 W RF Power MOSFET - TO-270G-2
Rf Fet, 110V, 10W, To-270G Rohs Compliant: Yes |Nxp MRF6V2010GNR1
Transistors RF MOSFET VHV6 10W TO270-2GN
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageTO-270-2
MountSurface Mount
Number of Terminals2
Weight547.996282 mg
Technical
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Element ConfigurationSingle
Frequency220 MHz
Gain22.5 dB
Gate to Source Voltage (Vgs)10 V
Max Operating Temperature225 °C
Min Breakdown Voltage110 V
Number of Elements1
Output Power10 W
PackagingTape & Reel
Test Current30 mA
Test Voltage50 V
Voltage Rating110 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRF6V2010GNR1.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità