NXP Semiconductors BFG520W/X,115
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors BFG520W/X,115.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1996-07-01
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2015-12-31
LTD Date2016-06-30
Parti correlate
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NXP SemiconductorsBFG410W,115
BFG410W Series 4.5 V 54 mW 22 GHz SMT NPN Wideband Transistor - SOT343R
Descrizioni
Descrizioni di NXP Semiconductors BFG520W/X,115 fornite dai suoi distributori.
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN
Trans GP BJT NPN 15V 0.07A 4-Pin(3+Tab) SO T/R
RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 4-SOT-343N
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:15V; Transition Frequency Typ, ft:9GHz; Power Dissipation, Pd:500mW; DC Collector Current:70mA; DC Current Gain Max (hfe):120 ;RoHS Compliant: Yes
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage15 V
Collector Emitter Voltage (VCEO)15 V
Continuous Collector Current70 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2.5 V
Frequency9 GHz
Gain17 dB
Gain Bandwidth Product9 GHz
hFE Min60
Max Breakdown Voltage15 V
Max Collector Current70 mA
Max Frequency9 GHz
Max Operating Temperature175 °C
Max Power Dissipation500 mW
Min Operating Temperature-65 °C
Number of Elements1
Output Power500 mW
PolarityNPN
Power Dissipation500 mW
Transition Frequency9 GHz
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors BFG520W/X,115.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità