NXP Semiconductors BF545B
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1989-12-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-01-07
LTD Date2018-07-07
Parti correlate
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PMBFJ108 Series Single N Channel 25 V 12 Ohm Surface Mount JFET - SOT-23
NXP SemiconductorsPMBFJ110,215
PMBFJ110 Series N-Channel 25 V Surface Mount Junction FET - SOT-23
NXP SemiconductorsPMBFJ108,215
PMBFJ108 Series Single N Channel 25 V 8 Ohm Surface Mount JFET - SOT-23
Descrizioni
Descrizioni di NXP Semiconductors BF545B fornite dai suoi distributori.
VHF BAND Si N-CHANNEL RF SMALL SIGNAL JFET TO-236AB
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
TRANSISTOR, JFET, N, RF, SOT-23; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: 6mA; Zero Gate Voltage Drain Current Idss Max: 15mA; Gate-Source Cutoff Voltage Vgs(off) Max: 7.5V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Idss Max: 15mA; Current Idss Min: 6mA; Current Ig: 10mA; Drain Source Voltage Vds: 30V; Junction Temperature Tj Max: 150°C; No. of Pins: 3Pins; Pin Configuration: S(1), D(2), G(3); Power Dissipation Pd: 250mW; Power Dissipation Ptot Max: 250mW; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Voltage Vgs Off Min: -0.4V; Zero Gate Voltage Drain Current Idss: 6mA to 15mA
Transistor, Jfet, N, Rf, Sot-23; Tipo De Transistor:Jfet; Tensión Disruptiva Vbr:30V; Corr. De Drenaje Idss Mín, Tensión Puerta Nula:15Ma; Corr. De Drenaje Idss Máx, Tens De Puerta Nula:15Ma; Núm. De Contactos:3 |Nxp BF545B
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Case/PackageSOT-23
Number of Pins3
Number of Terminals3
Technical
Breakdown Voltage30 V
Gate to Source Voltage (Vgs)7.5 V
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Breakdown Voltage30 V
Number of Elements1
PackagingCut Tape
Power Dissipation250 mW
Conformità
Classificazione ambientale
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità