NXP Semiconductors BC807-40

Bipolar Transistors (BJT); BC807-40; NEXPERIA; PNP; 3; 45 V; 500 mA

45 V, 500 MILLI AMP PNP GENERAL-PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

TRANSISTOR, PNP, 45V, 0.5A, SOT23

500 mA 45 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

NXP BC807-40 SOT-23 PNP Transistor

Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Continuous Collector Current, Ic:500mA; Collector Emitter Saturation Voltage, Vce(sat):-700mV; Power Dissipation, Pd:250mW ;RoHS Compliant: Yes

TRANSISTOR,PNP,45V,0.5A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:BC807-40; Gain Bandwidth ft Min:80MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:250; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:5C; Termination Type:SMD; Voltage Vcbo:50V

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = -500 / Collector-Emitter Voltage (Vceo) V = -45 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = -50 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 80 / Power Dissipation (Pd) mW = 345 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = -700 / Reflow Temperature Max. °C = 260