Nexperia PESD3V3L1BA
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.50
Introduction Date2004-09-27
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descrizioni
Descrizioni di Nexperia PESD3V3L1BA fornite dai suoi distributori.
DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, SC-76, 2 PIN, Transient Suppressor
Trans Voltage Suppressor Diode, 500W, 3.3V V(RWM), Bidirectional, 1 Element, Silicon
ESD Suppressor Diode TVS Bi-Dir 3.3V Automotive 2-Pin SOD-323 / Low capacitance bidirectional ESD protection diodes in
ESD Suppressor TVS 30KV 2-Pin SOD-323
Electrostatic Discharge (ESD) Protects Devices
Nexperia PESD3V3L1BA,115 静电保护二极管
RS APAC
DIODE, TVS, SOD-323; Reverse Stand-Off Voltage Vrwm:3.3V; Breakdown Voltage Range:5.8V to 6.9V; Clamping Voltage Vc Max:6.4V; Diode Configuration:Bidirectional; Peak Pulse Current Ippm:18A; Diode Case Style:SOD-323; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SC-76; Breakdown Voltage:6.4V; Breakover Voltage Min:5.8V; Capacitance Cd @ Vr Max:95pF; Capacitance Cd @ Vr Typ:101pF; Clamping Voltage @ 8/20µs Max:26V; Diode Type:TVS, Bidirectional; Operating Temperature Range:-65°C to +150°C; Package / Case:SOD-323; Peak Pulse Power:500W; Pin Configuration:1; SMD Marking:AB; Stand-off Voltage:3.3V; Termination Type:SMD
Alias del produttore
Nexperia ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Nexperia può anche essere conosciuto con i seguenti nomi:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Specifiche tecniche
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Ambient Temperature Range High150 °C
Breakdown Voltage6.4 V
Capacitance101 pF
Clamping Voltage26 V
DirectionBidirectional
Element ConfigurationSingle
ESD ProtectionYes
Leakage Current2 µA
Max Breakdown Voltage6.9 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Reverse Leakage Current2 µA
Min Breakdown Voltage5.8 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage3.3 V
PackagingCut Tape
Peak Pulse Current18 A
Peak Pulse Power 500 W
Peak Reverse Current1 µA
PolarityBidirectional
Reverse Standoff Voltage3.3 V
Test Current5 mA
Working Voltage3.3 V
Dimensions
Depth1.35 mm
Height1.1 mm
Length1.8 mm
Width1.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101 , MIL-STD-883
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità