Nexperia BST50,115
$ 0.255
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Parti correlate
ROHM2SD1664T100R
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SD1664T100Q
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SD1664T100P
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Descrizioni
Descrizioni di Nexperia BST50,115 fornite dai suoi distributori.
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
BST50 Series 45 V 1 A 1.3 W SMT NPN Darlington Transistor - SOT-89
Nexperia Darlington Transistor, NPN, 1A, UPAK Package, SMD, 4-Pin
1000 mA 45 V NPN Si SMALL SIGNAL TRANSISTOR TO-243AA
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:200MHz; Power Dissipation, Pd:1.3W; DC Collector Current:1A; DC Current Gain Max (hfe):2000 ;RoHS Compliant: Yes
TRANS NPN 45V 0.5A SOT89; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:45V; Typ Gain Bandwidth ft:200MHz; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-89; Max Current Ic Continuous a:500mA; Max Voltage Vce Sat:1.3V; Min Hfe:2000; Power Dissipation:1.3W; Termination Type:SMD; Transistor Type:Darlington
Alias del produttore
Nexperia ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Nexperia può anche essere conosciuto con i seguenti nomi:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-89
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight130.492855 mg
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage1.3 V
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product200 MHz
hFE Min2000
Max Breakdown Voltage45 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.3 W
Schedule B8541290080
Transition Frequency200 MHz
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità