Littelfuse IXTP120N04T2
$ 1.61
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Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-23
Lifecycle StatusProduction (Last Updated: 6 months ago)
Parti correlate
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N-channel 40 V, 0.0043 Ohm typ., 120 A, STripFET(TM) II Power MOSFET in TO-220 package
InfineonIPP048N04NGXKSA1
MOSFET N-CH 40V 70A TO220-3 N-Channel 40 V 70A (Tc) 79W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP120N4F6
N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
InfineonIPP023N04NGXKSA1
MOSFET N-CH 40V 90A TO220-3 N-Channel 40 V 90A (Tc) 167W (Tc) Through Hole PG-TO220-3
Descrizioni
Descrizioni di Littelfuse IXTP120N04T2 fornite dai suoi distributori.
N-Channel 40 V 120 A 6.1 mO Flange Mount TrenchT2 Power Mosfet - TO-220
Gen2 Series - 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options, TO-220, RoHS
Littelfuse SCT
Power Field-Effect Transistor, 120A I(D), 40V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
200W(Tc) 20V 4V@ 250µA 58nC@ 10 V 1individualNChannel 40V 6.1mΩ@ 25A,10V 120A 3.24nF@25V TO-220-3 Through hole mounting 10.66mm*4.83mm*16mm
Alias del produttore
Littelfuse ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Littelfuse può anche essere conosciuto con i seguenti nomi:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.1 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.24 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Rds On Max6.1 mΩ
Reverse Recovery Time35 ns
Rise Time8 ns
Turn-Off Delay Time16 ns