Littelfuse IXFH120N20P
$ 8.08
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Cronologia dell'inventario
Tendenza a 3 mesi: +4.95%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
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Descrizioni
Descrizioni di Littelfuse IXFH120N20P fornite dai suoi distributori.
IXYS SEMICONDUCTOR IXFH120N20P MOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
Polar™ Series - 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), TO-247AD, RoHS
Littelfuse SCT
MOSFET, Single - N-Channel, 200V, 120A, 714W, TO-247
IXYS NMOS HiperFET, Polar, Vds=200 V, 120 A, TO-247, , 3
MOSFET + Inverse Diode TO247AD
Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
DiscMosfetN-CH HiPerFET-Polar TO-247AD
Mosfet, N-Ch, 200V, 120A, 175Deg C, 714W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Ixys Semiconductor IXFH120N20P
Alias del produttore
Littelfuse ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Littelfuse può anche essere conosciuto con i seguenti nomi:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- Littelfuse/Commercial Vehicle Products
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
Cronologia dell'inventario
Tendenza a 3 mesi: +4.95%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation714 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation714 W
Rds On Max22 mΩ
Resistance22 MΩ
Reverse Recovery Time100 ns
Rise Time35 ns
Threshold Voltage5 V
Turn-Off Delay Time100 ns
Turn-On Delay Time30 ns
Dimensions
Height25.96 mm
Length16.26 mm
Width5.3 mm