Infineon SPW20N60C3FKSA1

MOSFET N-CH 650V 20.7A TO-247 / Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-247 Tube

SPW20N60C3 N-CHANNEL MOSFET TRANSISTOR, 21 A, 650 V, 3-PIN TO-247

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:20.7A; Current Id Max:20.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:208W; Power Dissipation Pd:208W; Power Dissipation Ptot Max:208W; Pulse Current Idm:62.1A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter