Infineon SPD07N20GBTMA1
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Descrizioni
Descrizioni di Infineon SPD07N20GBTMA1 fornite dai suoi distributori.
SIPMOSÒ Power Transistor Features N channel Enhancement mode Avalanche rated
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 200V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance400 pF
Max Dual Supply Voltage200 V
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance400 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation40 W
Rds On Max400 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time10 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità