Infineon JANSR2N7479U3
$ 2,061.34
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-05-12
Lifecycle StatusProduction (Last Updated: 3 months ago)
Descrizioni
Descrizioni di Infineon JANSR2N7479U3 fornite dai suoi distributori.
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package, SMD-0.5-3
Infineon SCT
Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5,
Non-Compliant Surface Mount 3 Production (Last Updated: 2 years ago) 75 W Yes 150 °C -55 °C
Trans MOSFET N-CH 30V 22A 3-Pin SMD-0.5
22 A 30 V 0.02 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: Proven performance and reliability in space applications.; Packaged on a MIL-PRF-19500 manufacturing line
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Body MaterialCeramic
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Conformità
Classificazione ambientale
Radiation HardeningYes
REACH SVHCYes
RoHSNon-Compliant
Dichiarazioni di conformità