Infineon ISC151N08NM6ATMA1

Power MOSFET, N Channel, 80 V, 37 A, 0.0151 Ohm, TDSON-FL, 8 Pins, Surface Mount

Mosfet, N-Ch, 80V, 37A, Tdson-Fl; |Infineon Technologies ISC151N08NM6ATMA1

80 V 9.2 A 3 W SMT N-Channel OptiMOSTM 6 Power-Transistor - PG-TDSON-8 FL

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering.Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >24% lower RDS(on) and ~40% improved FOMQg x RDS(on) and FOMQgd x RDS(on) in SuperSO8 The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction.Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).