Infineon IRS2101PBF

Power MOSFET and IGBT Driver, High Voltage, High Speed, 600V, 8-pin PDIP, Tube - Rail/Tube

IRS2101 Series 600 V 290 mA 20 V Supply Dual High And Low Side Driver - PDIP-8

HIGH AND LOW SIDE DRIVER Buffer/Inverter Based Peripheral Driver, CMOS, PDIP8

600 V high-side and low-side gate driver IC, PDIP8, RoHS

70ns 2 10V 220ns 20V 800mV,2.5V Non-Inverting IGBT,MOSFET,N 35ns , 290mA,600mA PDIP-8 5.33mm

Half Bridge Based IGBT/MOSFET Driver, 0.64A, CMOS, PDIP8

Bridge Driver IC Operating temperature: -40...+125 °C Output voltage: 10...20 V Power supply: 10...20 V Input: logic input Package: DIL-8 Sink output current: 0.27 A Source output current: 0.13 A

IC, DRIVER, HIGH/LOW SIDE, DIP8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:600mA; Input Delay:160ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2101; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:290mA; Output Current + Max:270mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole

600 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Outputs in phase with inputs