Infineon IRLZ44ZSTRLPBF
$ 1.38
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRLZ44ZSTRLPBF | 9980 | 19h | |||||||||
| DigiKey | IRLZ44ZSTRLPBFCT-ND | 1 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRLZ44ZSTRLPBF | 0 | 800 | Bulk | 11h | |||||||
| Farnell | IRLZ44ZSTRLPBF | 0 | 1 | Cut Tape | 5h | |||||||
| Mouser | 942-IRLZ44ZSTRLPBF | 46 | 1 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.01%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo Infineon IRLZ44ZSTRLPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
Parti correlate
InfineonIRFZ44ZSPBF
HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mΩ , ID = 51A ) | MOSFET N-CH 55V 51A D2PAK
InfineonIRFZ44NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
STMicroelectronicsSTB60NF06LT4
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET II Power MOSFET in a D2PAK package
STMicroelectronicsSTB60NF06T4
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
Descrizioni
Descrizioni di Infineon IRLZ44ZSTRLPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 51A;D2Pak;PD 80W;VGS +/-16V
Single N-Channel 55 V 13.5 mOhm 24 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 51A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:51A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 51 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 13.5 / Gate-Source Voltage V = 16 / Fall Time ns = 42 / Rise Time ns = 160 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 80
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.01%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time42 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.62 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity800
Power Dissipation80 W
Rds On Max13.5 mΩ
Resistance13.5 MΩ
Rise Time160 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità