Infineon IRLZ24NPBF

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 18 A, TO-220, IRLZ24NPBF
$ 1.23
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
RS (Formerly Allied Electronics)
2
IRLZ24NPBF01Bulk
12h
Farnell
2
IRLZ24N01
7h
Component Stockers USAIRLZ24NPBF5654
>1wk
Weyland Electronics Group Pte. Ltd.IRLZ24NPBF20001Tape & Reel
3d
Win Source
2
WS-IRLZ24N80004
21h

Schede tecniche e documenti

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IHS

Datasheet9 pagine22 anni fa
Datasheet10 pagine22 anni fa
Datasheet9 pagine23 anni fa

element14 APAC

Newark

RS (Formerly Allied Electronics)

Jameco

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-25
LTD Date2013-02-25

Parti correlate

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Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 21 A, 55 mΩ, TO-220
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MOSFET N-CH 55V 15A TO-220AB
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Descrizioni

Descrizioni di Infineon IRLZ24NPBF fornite dai suoi distributori.

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 18 A, TO-220, IRLZ24NPBF
Burklin Elektronik
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
Transistor MOSFET N-Ch. 18A/55V TO220 IRLZ 24 NPBF
Rapid Electronics
Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB
Avnet
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.06Ohm,ID 18A,TO-220AB,PD 45W,VGS +/-16V | Infineon IRLZ24N
RS (Formerly Allied Electronics)
55V SINGLE N-CHANNEL HEXFETPOWER MOSFET IN A HEXDIP PA
Jameco
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45
Distrelec

Immagini

Infineon
element14 APAC
Farnell
DKO Electronshik
TME
RS
Micros
Conrad
iiiC
RS (Formerly Allied Electronics)
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Jameco
element14
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Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLZ24NPBF
  • IRLZ 24 NPBF
  • IRLZ24N
  • IRLZ24NPBF.
  • SP001553022