Infineon IRLU2905ZPBF
$ 1.77
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
Parti correlate
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Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, IPAK-3, RoHS
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MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;I-Pak (TO-251AA);PD 110W
onsemiNTD32N06-1G
Tube Through Hole N-Channel Single Mosfet Transistor 32A Ta 32A 93.75W 93ns
Descrizioni
Descrizioni di Infineon IRLU2905ZPBF fornite dai suoi distributori.
MOSFET, 55V, 60A, 13.5 mOhm, 23 nC Qg, Logic Level, I-Pak
Single N-Channel 55 V 22.5 mOhm 35 nC HEXFET® Power Mosfet - TO-251
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 55V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:1570pF; Current Id Max:42A; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:22ns; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.57 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation110 W
Rds On Max13.5 mΩ
Reverse Recovery Time22 ns
Rise Time130 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage1 V
Turn-Off Delay Time24 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height9.75 mm
Length6.7056 mm
Width2.3876 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità