Infineon IRLR7843TRPBF
$ 0.551
Production
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Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR7843TRPBF | 12.000 | 2K | 4d | ||||||||
| Newark | IRLR7843TRPBF | 1255 | 5 | Cut Tape | ||||||||
| Future Electronics | IRLR7843TRPBF | 10.000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRLR7843TRPBF | 790 | 1 | |||||||||
| Rochester Electronics | IRLR7843TRPBF | 6900 | 23h |
Cronologia dell'inventario
Tendenza a 3 mesi: -7.21%
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRLR7843PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 161A;D-Pak (TO-252AA);VF 1V
InfineonIRLR8743TRPBF
Mosfet IC; Transistor Type:MOSFET; Package/Case:3-TO-251; No. of Pins:3 ;RoHS Compliant: Yes
Descrizioni
Descrizioni di Infineon IRLR7843TRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 161A;D-Pak (TO-252AA);VF 1V
Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - DPAK
Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:161A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 161 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -7.21%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating161 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.3 V
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation140 W
Rds On Max3.3 mΩ
Resistance3.3 MΩ
Rise Time42 ns
Schedule B8541290080
Threshold Voltage2.3 V
Turn-Off Delay Time34 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)30 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità