Infineon IRLR7807ZTRPBF
$ 1.75
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRLR7807ZTRPBF | 0 | 20 | Bulk | 18h | |||||||
| Farnell | IRLR7807ZTRPBF | 0 | 1 | Cut Tape | 2h | |||||||
| Win Source | WS-IRLR7807ZTRPBF | 1000 | 145 | 3h | ||||||||
| Worldway Electronics | IRLR7807ZTRPBF | 3260 | 7 | Tape & Reel | 2h | |||||||
| SHENGYU ELECTRONICS | IRLR7807ZTRPBF | 15.799 | 1 | 3d |
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
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STMicroelectronicsSTD40P3LLH6
P-channel -30 V, 12 mOhm typ., -40 A STripFET H6 Power MOSFET in a DPAK package
Descrizioni
Descrizioni di Infineon IRLR7807ZTRPBF fornite dai suoi distributori.
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
MOSFET, 30V, 43A, 13.8 MOHM, 7 NC QG, LOGIC LEVEL, D-PAK
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 43A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:43A; On Resistance, Rds(on):18.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating43 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance780 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance13.8 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation40 W
Rds On Max13.8 mΩ
Resistance13.8 MΩ
Rise Time28 ns
Turn-Off Delay Time9.8 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)30 V
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità