Infineon IRLML5203TRPBF
$ 0.15
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: +1.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo Infineon IRLML5203TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | SimboloImpronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-05
Lifecycle StatusEOL (Last Updated: 5 months ago)
Parti correlate
InfineonIRLML9301TRPBF
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML2030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
InfineonIRLML9303TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS
Diodes Inc.DMG3406L-7
Transistor: N-MOSFET; unipolar; 30V; 2.8A; 0,07ohm;1.4W; -55+150 st.C; SMD; SOT23
Diodes Inc.DMP3099L-13
DMP3099L Series 30 V 3.8 A P-Channel Enhancement Mode Mosfet - SOT-23-3
Diodes Inc.DMP3068L-7
DMP3068L Series 30 V 3.3 A P-Channel Enhancement Mode Mosfet - SOT-23-3
Descrizioni
Descrizioni di Infineon IRLML5203TRPBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount
HEXFET Power MOSFET Small Signal Field-Effect Transistor
Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:Micro3 ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +1.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Current Rating-3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance510 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Elements1
On-State Resistance98 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max98 mΩ
Resistance98 MΩ
Rise Time18 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.5 V
Turn-Off Delay Time88 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width3.05 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità