Infineon IRLI530NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55deg

Single N-Channel 100 V 0.12 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3FP

100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

Trans MOSFET N-CH 100V 12A 3-Pin (3+Tab) TO-220FP

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 41 W

HEXFET POWER MOSFET Power Field-Effect Transistor, 12A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

N CH MOSFET, 100V, 12A, TO-220FP; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:3.7°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:33W; Power Dissipation Pd:33W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V