Infineon IRLH7134TRPBF
Obsolete
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Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-25
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Parti correlate
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Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package
Descrizioni
Descrizioni di Infineon IRLH7134TRPBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
Infineon SCT
T&R / MOSFET, 40V, 50A, 3.3 mOhm, 39 nC Qg, Logic Level, PQFN5x6
HEXFET POWER MOSFET Power Field-Effect Transistor, 26A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 26A 8-Pin PQFN T/R
Benefits: Low RDSon (less than 4.7mOhms @ Vgs = 4.5V) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 1.2C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)26 A
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time13 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.72 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation104 W
Rds On Max3.3 mΩ
Rise Time75 ns
Turn-Off Delay Time18 ns
Turn-On Delay Time21 ns
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità