Infineon IRGP20B120U-EP
Obsolete
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Modelli CAD
Scarica il simbolo Infineon IRGP20B120U-EP, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
Parti correlate
InfineonIRG4PH40KPBF
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
InfineonIRG8P25N120KD-EPBF
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube
Descrizioni
Descrizioni di Infineon IRGP20B120U-EP fornite dai suoi distributori.
IRGP20B120U Series 1200 V 40 A Insulated Gate Bipolar Transistor - TO247AD
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247AD
1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package
IGBT ULT FAST 1200V 40A TO247AD
Target Applications: Refridgeration; Welding
IRGP20B120 - DISCRETE IGBT WITHO
IGBT, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:3.2V; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:35ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:300W; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulsed Current Icm:120A; Rise Time:30ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage4.23 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current40 A
Current Rating40 A
Element ConfigurationSingle
Fall Time35 ns
Max Collector Current40 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation300 W
Rise Time30 ns
Turn-Off Delay Time204 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height24.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità